IndiumV3, Main, Repository, bibRecord, 005591

Electrical Conductivity of InN Nanowires and the Influence of the Native Indium Oxide Formed at Their Surface

Identifieur interne : 005591 ( Main/Repository ); précédent : 005590; suivant : 005592

Electrical Conductivity of InN Nanowires and the Influence of the Native Indium Oxide Formed at Their Surface

Auteurs : RBID : Pascal:09-0213266

Descripteurs français

Pascal (Inist)
- Conductivité électrique, Composé III-V, Nanofil, Nanomatériau, Oxyde d'indium, Propriété électrique, Niveau coeur, Photoémission, Interface, Nitrure d'indium, InN, In2O3, 7363, 8107V, 8107B, 7960J.

English descriptors

KwdEn :
- Core levels, Electrical conductivity, Electrical properties, III-V compound, Indium nitride, Indium oxide, Interfaces, Nanostructured materials, Nanowires, Photoemission.

Abstract

The electrical properties of InN nanowires were investigated in four-point probe measurements. The dependence of the conductance on the wire diameter allows distinguishing between "core" bulk (quadratic) and "shell" sheet (linear) contributions. Evidence of the formation of a thin In₂O₃ layer at the surface of the nanowires is provided by X-ray core level photoemission spectroscopy. The shell conductivity is therefore ascribed to an electron accumulation layer forming at the radial InN/In₂O₃ interface. Although conductance through the accumulation layer dominates for nanowires below a critical diameter of about 55 nm, the core channel cannot be neglected, even for small nanowires.

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Pascal:09-0213266

Le document en format XML

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<author><name sortKey="Werner, Florian" uniqKey="Werner F">Florian Werner</name>
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<author><name sortKey="Carsten, Michael" uniqKey="Carsten M">Michael Carsten</name>
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<front><div type="abstract" xml:lang="en">The electrical properties of InN nanowires were investigated in four-point probe measurements. The dependence of the conductance on the wire diameter allows distinguishing between "core" bulk (quadratic) and "shell" sheet (linear) contributions. Evidence of the formation of a thin In<sub>2</sub>
O<sub>3</sub>
 layer at the surface of the nanowires is provided by X-ray core level photoemission spectroscopy. The shell conductivity is therefore ascribed to an electron accumulation layer forming at the radial InN/In<sub>2</sub>
O<sub>3</sub>
 interface. Although conductance through the accumulation layer dominates for nanowires below a critical diameter of about 55 nm, the core channel cannot be neglected, even for small nanowires.</div>
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O<sub>3</sub>
 layer at the surface of the nanowires is provided by X-ray core level photoemission spectroscopy. The shell conductivity is therefore ascribed to an electron accumulation layer forming at the radial InN/In<sub>2</sub>
O<sub>3</sub>
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Electrical Conductivity of InN Nanowires and the Influence of the Native Indium Oxide Formed at Their Surface

Electrical Conductivity of InN Nanowires and the Influence of the Native Indium Oxide Formed at Their Surface

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

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